CARBON REPLENISHMENT OF SILICON-CONTAINING MATERIALS TO REDUCE THICKNESS LOSS

Organization Name

Applied Materials, Inc.

Inventor(s)

Yuriy Shusterman of Ballston Lake NY US

Sean Reidy of Clifton Park NY US

Sai Hooi Yeong of Cupertino CA US

Lisa Megan Mcgill of Hillsboro OR US

Benjamin Colombeau of San Jose CA US

Andre P. Labonte of Mechanicville NY US

Veeraraghavan S. Basker of Fremont CA US

Balasubramanian Pranatharthiharan of San Jose CA US

CARBON REPLENISHMENT OF SILICON-CONTAINING MATERIALS TO REDUCE THICKNESS LOSS

This abstract first appeared for US patent application 18894665 titled 'CARBON REPLENISHMENT OF SILICON-CONTAINING MATERIALS TO REDUCE THICKNESS LOSS

Original Abstract Submitted

Exemplary methods of semiconductor processing may include providing an etchant precursor to a processing region of a semiconductor processing chamber. A structure may be disposed within the processing region. The structure may include a first silicon-containing material. The structure may include a second silicon-containing material, an oxygen-containing material, or both. The methods may include contacting the structure with the etchant precursor. The contacting with the etchant precursor may etch at least a portion of the second silicon-containing material or the oxygen-containing material from the structure. The methods may include providing a carbon-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting the structure with the carbon-containing precursor. The contacting with the carbon-containing precursor may replenish carbon in the first silicon-containing material.