18894510. MEMORY CIRCUIT (ROHM CO., LTD.)
MEMORY CIRCUIT
Organization Name
Inventor(s)
Daigo Fujimura of Kyoto-shi (JP)
MEMORY CIRCUIT
This abstract first appeared for US patent application 18894510 titled 'MEMORY CIRCUIT
Original Abstract Submitted
A memory circuit includes a first switch provided for each pair of first and second bit lines and connected to a first and a second memory cell, a first all bit line selection circuit that, if an input test signal indicates a test, can turn on all the first switches regardless of the bit data of an input switch control signal, and a sensing circuit that can sense the magnitude relationship between the sum of currents flowing through the first bit lines and a reference current and the magnitude relationship between the sum of currents flowing through the second bit lines and the reference current. The gate of a first memory transistor and the gate of a second memory transistor can be fed with a direct-current voltage.