18894346. SEMICONDUCTOR DEVICE (Japan Display Inc.)
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Toshinari Sasaki of Tokyo (JP)
SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18894346 titled 'SEMICONDUCTOR DEVICE
Original Abstract Submitted
A semiconductor device includes a metal oxide layer over an insulating surface, an oxide semiconductor layer over the metal oxide layer, and an insulating layer over the oxide semiconductor. The insulating layer includes a first region overlapping the oxide semiconductor layer. A first aluminum concentration of the first region is greater than or equal to 1×10atoms/cm.