18894340. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE (Japan Display Inc.)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Toshinari Sasaki of Tokyo (JP)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18894340 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Original Abstract Submitted
A method for manufacturing a semiconductor device, the method comprising steps of: forming a first metal oxide layer containing aluminium as a main component above an insulating surface; performing a planarization process on a surface of the first metal oxide layer; forming an oxide semiconductor layer on the insulating surface on which the planarization process is performed; forming a gate insulating layer above the oxide semiconductor layer; and forming a gate electrode facing the oxide semiconductor layer above the gate insulating layer.