18892108. SELF-MIXING INTERFEROMETRY USING BACKSIDE-EMITTING VCSEL DIODE WITH INTEGRATED PHOTODETECTOR (Apple Inc.)
SELF-MIXING INTERFEROMETRY USING BACKSIDE-EMITTING VCSEL DIODE WITH INTEGRATED PHOTODETECTOR
Organization Name
Inventor(s)
Pengfei Qiao of El Cerrito CA US
Siddharth Joshi of Saint-Egreve FR
Nicolas Hotellier of Champagnier FR
Pierre-Antoine Delean of Domene FR
SELF-MIXING INTERFEROMETRY USING BACKSIDE-EMITTING VCSEL DIODE WITH INTEGRATED PHOTODETECTOR
This abstract first appeared for US patent application 18892108 titled 'SELF-MIXING INTERFEROMETRY USING BACKSIDE-EMITTING VCSEL DIODE WITH INTEGRATED PHOTODETECTOR
Original Abstract Submitted
Embodiments described herein include an optoelectronic sensing device having a vertical cavity surface emitting laser (VCSEL), a resonance cavity photodetector (RCPD), and a tunnel junction. The VCSEL is at least partly defined by a first set of semiconductor layers disposed on a substrate. The first set of semiconductor layers includes a first active region. The VCSEL is configured to emit laser light towards the substrate, upon application of a first bias voltage, and undergo self-mixing interference upon reception of reflections or backscatters thereof. The RCPD is vertically adjacent to the VCSEL and is at least partly defined by a second set of semiconductor layers disposed on the substrate. The second set of semiconductor layers includes a second active region. The RCPD is configured to detect, upon application of a second bias voltage, the self-mixing interference. The tunnel junction is disposed between the first active region and the second active region.
- Apple Inc.
- Pengfei Qiao of El Cerrito CA US
- Fei Tan of Sunnyvale CA US
- Tong Chen of Fremont CA US
- Qinghong Du of Fremont CA US
- Siddharth Joshi of Saint-Egreve FR
- Nicolas Hotellier of Champagnier FR
- Alexander Hein of Munich DE
- Pierre-Antoine Delean of Domene FR
- H01S5/183
- H01S5/026
- H01S5/042
- H01S5/30
- CPC H01S5/18394
