18892003. HEMT TRANSISTOR (STMicroelectronics International N.V.)

HEMT TRANSISTOR

Organization Name

STMicroelectronics International N.V.

Inventor(s)

Paolo Colpani of Agrate Brianza IT

Luisito Livellara of Cernusco sul Naviglio IT

HEMT TRANSISTOR

This abstract first appeared for US patent application 18892003 titled 'HEMT TRANSISTOR

Original Abstract Submitted

The present disclosure generally provides for a high electron mobility transistor or HEMT. An example HEMT includes a first semiconductor layer; a gate arranged on a first surface of the first semiconductor layer; a first passivation layer comprising at least a sub-layer of a first dielectric material on the sides of the gate, the first passivation layer further extending over a first portion of the surface of the first semiconductor layer; and a second passivation layer, distinct from the first passivation layer, comprising at least a sub-layer of the same first dielectric material on a second portion of the surface of the first semiconductor layer next to the first passivation layer.