18889659. CAPACITOR STRUCTURE (NANYA TECHNOLOGY CORPORATION)
CAPACITOR STRUCTURE
Organization Name
Inventor(s)
Chien-Chung Wang of New Taipei City (TW)
Hsih-Yang Chiu of New Taipei City (TW)
CAPACITOR STRUCTURE
This abstract first appeared for US patent application 18889659 titled 'CAPACITOR STRUCTURE
Original Abstract Submitted
A capacitor structure includes a contact layer having first, second, third, fourth and fifth portions arranged from periphery to center, an insulating layer over the contact layer and having an opening exposing the contact layer, a bottom conductive plate in the opening, a dielectric layer conformally on the bottom conductive plate and contacting the second and fourth portions of the contact layer, and a top conductive plate on the dielectric layer. The bottom conductive plate includes first, second and third portions extending along a depth direction of the opening, separated from each other, and contacting the first, third and fifth portions of the contact layer, respectively. The first portion of the bottom conductive plate surrounds the second portion of the bottom conductive plate, and the second portion of the bottom conductive plate surrounds the third portion of the bottom conductive plate.