18889143. MULTI-LAYERED EPITAXIAL STACK AND METHODS FOR PREPARING THE SAME (Applied Materials, Inc.)
MULTI-LAYERED EPITAXIAL STACK AND METHODS FOR PREPARING THE SAME
Organization Name
Inventor(s)
Arvind Kumar of Santa Clara CA US
Roya Baghi of Santa Clara CA US
Mahendra Pakala of Santa Clara CA US
Thomas Kirschenheiter of Tempe AZ US
MULTI-LAYERED EPITAXIAL STACK AND METHODS FOR PREPARING THE SAME
This abstract first appeared for US patent application 18889143 titled 'MULTI-LAYERED EPITAXIAL STACK AND METHODS FOR PREPARING THE SAME
Original Abstract Submitted
Embodiments of the present disclosure generally relate to epitaxial film stacks and vapor deposition processes for preparing the epitaxial film stacks. In one or more embodiments, a carbon-doped silicon-germanium and silicon mini-stack is produced with relatively low defects or crystal imperfections. A multi-layered epitaxial stack containing a plurality of the carbon-doped silicon-germanium and silicon mini-stacks is deposited on a substrate. Each multi-layered epitaxial stack contains a carbon-doped silicon germanium stack and a silicon film. The carbon-doped silicon germanium stack contains a carbon-silicon-germanium layer disposed between a first silicon-germanium layer and a second silicon-germanium layer. The silicon film contains the silicon bulk layer disposed on the silicon seed layer. In some embodiments, a method for fabricating the epitaxial film stack includes sequentially depositing a carbon-doped silicon germanium stack and a silicon film to form the carbon-doped silicon-germanium and silicon mini-stack during a deposition cycle.