18887079. SEMICONDUCTOR DEVICE (Japan Display Inc.)
SEMICONDUCTOR DEVICE
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Inventor(s)
SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18887079 titled 'SEMICONDUCTOR DEVICE
Original Abstract Submitted
A semiconductor device includes a first gate electrode, an oxide semiconductor layer including a first oxide semiconductor having a polycrystalline structure over the first gate electrode, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, and a second gate electrode overlapping the first gate electrode and the oxide semiconductor layer over the source electrode and the drain electrode. In a plan view, the second gate electrode is located with a space from each of the source electrode and the drain electrode. The second gate electrode is electrically connected to the first gate electrode.