18886692. DUAL WORK FUNCTION WORD LINE FOR 4F2 (Applied Materials, Inc.)
DUAL WORK FUNCTION WORD LINE FOR 4F2
Organization Name
Inventor(s)
Sony Varghese of Manchester MA US
Fredrick Fishburn of Aptos CA US
Balasubramanian Pranatharthiharan of San Jose CA US
DUAL WORK FUNCTION WORD LINE FOR 4F2
This abstract first appeared for US patent application 18886692 titled 'DUAL WORK FUNCTION WORD LINE FOR 4F2
Original Abstract Submitted
The present technology includes vertical cell array transistor (VCAT) with improved gate induced leakage current. The arrays one or more bit lines arranged in a first horizontal direction and one or more word lines arranged in a second horizontal direction. The arrays include one or more channels extending in a vertical direction generally orthogonal to the first direction and the second horizontal direction, such that the bit lines intersect with a source/drain region of the plurality of channels, and the word lines intersect with gate regions of the plurality of channels. Arrays include where at least one word includes a first section adjacent to the source/drain region and a second section adjacent to the gate region, where the second section contains a high work function material and the first section contains a low work function material.