18886016. METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND REWORKING PROCESS (NANYA TECHNOLOGY CORPORATION)

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND REWORKING PROCESS

Organization Name

NANYA TECHNOLOGY CORPORATION

Inventor(s)

WEI-CHEN Pan of NEW TAIPEI CITY (TW)

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND REWORKING PROCESS

This abstract first appeared for US patent application 18886016 titled 'METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND REWORKING PROCESS

Original Abstract Submitted

The present application discloses a method for fabricating a semiconductor device including providing a substrate; forming a dielectric layer on the substrate; forming a via opening in the dielectric layer using a first mask layer as a mask; forming a failed hard mask layer to fill the via opening; forming a second mask layer on the failed hard mask layer; removing the second mask layer and the failed hard mask layer; forming an underfill layer to fill the via opening; forming a top hard mask layer on the underfill layer; forming a third mask layer on the top hard mask layer; patterning the top hard mask layer using the third mask layer as a mask; forming a trench opening in the dielectric layer using the top hard mask layer as a mask; and forming a via in the via opening and forming a trench in the trench opening.