18884101. SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE (Kioxia Corporation)
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Takeru Maeda of Yokkaichi Mie JP
Sakuya Kaneko of Yokkaichi Mie JP
Kenichiro Toratani of Fujisawa Kanagawa JP
Takafumi Ochiai of Kuwana Mie JP
Kazuhiro Matsuo of Kuwana Mie JP
Masaya Toda of Yokkaichi Mie JP
Kotaro Noda of Yokkaichi Mie JP
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE
This abstract first appeared for US patent application 18884101 titled 'SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE
Original Abstract Submitted
According to one embodiment a semiconductor device includes an oxide semiconductor column that extends in a first direction. A first electrode contacts a first end of the oxide semiconductor column and a second electrode contacts a second end. A gate electrode surrounds a portion of the oxide semiconductor column. A first insulating film is between the gate electrode and the oxide semiconductor column. A second insulating film is between the gate electrode and the first electrode in the first direction and surrounds the oxide semiconductor column via the first insulating film. A region in which at least a part of the oxide semiconductor column is accommodated is formed by the gate electrode and the second insulating film, and the region has a stepped surface facing towards the second electrode.
- Kioxia Corporation
- Takeru Maeda of Yokkaichi Mie JP
- Sakuya Kaneko of Yokkaichi Mie JP
- Kenichiro Toratani of Fujisawa Kanagawa JP
- Takafumi Ochiai of Kuwana Mie JP
- Kazuhiro Matsuo of Kuwana Mie JP
- Masaya Toda of Yokkaichi Mie JP
- Ha Hoang of Kuwana Mie JP
- Kotaro Noda of Yokkaichi Mie JP
- H10B12/00
- H01L29/786
- CPC H10B12/33