18882226. Transistor Device (Infineon Technologies AG)
Transistor Device
Organization Name
Inventor(s)
Thomas Aichinger of Faak am See AT
Wolfgang Bergner of Klagenfurt am Wörthersee AT
Grazvydas Ziemys of München DE
Alexey Mikhaylov of Villach AT
Gerald Rescher of Maria Saal AT
Transistor Device
This abstract first appeared for US patent application 18882226 titled 'Transistor Device
Original Abstract Submitted
A transistor device is disclosed. The transistor device includes a semiconductor body and plurality of transistor cells. Each transistor cell includes: a drift region and a source region of a first doping type; a body region of a second doping type complementary to the first doping type; a field shaping region of the second doping type connected to a source node; and a gate electrode connected to a gate node. The gate electrode is arranged in a trench extending from a first surface into the semiconductor body. The gate electrode is dielectrically insulated from the body region by a gate dielectric. At least portions of the gate electrode are dielectrically insulated from the drift region by a field dielectric. The field shaping region adjoins the trench. The field dielectric comprises a high-k dielectric.
- Infineon Technologies AG
- Thomas Aichinger of Faak am See AT
- Hans Weber of Villach AT
- Michael Hell of Erlangen DE
- Wolfgang Bergner of Klagenfurt am Wörthersee AT
- Armin Tilke of Dresden DE
- Grazvydas Ziemys of München DE
- Alexey Mikhaylov of Villach AT
- Gerald Rescher of Maria Saal AT
- H01L29/40
- H01L29/16
- H01L29/423
- H01L29/51
- H01L29/78
- CPC H10D64/117