18835824. MAGNETORESISTIVE EFFECT MEMORY (Sony Semiconductor Solutions Corporation)
MAGNETORESISTIVE EFFECT MEMORY
Organization Name
Sony Semiconductor Solutions Corporation
Inventor(s)
MASANORI Hosomi of KANAGAWA JP
MAGNETORESISTIVE EFFECT MEMORY
This abstract first appeared for US patent application 18835824 titled 'MAGNETORESISTIVE EFFECT MEMORY
Original Abstract Submitted
A magnetoresistive effect memory () includes: a magnetoresistive element () including a fixed layer () whose magnetization direction is fixed and a recording layer () whose magnetization direction changes; and a write circuit () that reverses magnetization of the recording layer () so that a resistance value of the magnetoresistive element () is switched between a low resistance value and a high resistance value, in which the magnetization of the recording layer () rotates by precession around a magnetic field in a plane direction of the layer when a voltage is applied to the magnetoresistive element (), the resistance value of the magnetoresistive element () gradually changes between the low resistance value and the high resistance value during the rotation of the magnetization of the recording layer (), and the write circuit () reverses the magnetization of the recording layer () so that the resistance value of the magnetoresistive element () is switched from the high resistance value to the low resistance value by applying a current limited so as to have a predetermined magnitude to the magnetoresistive element ().