18834732. SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS (SONY SEMICONDUCTOR SOLUTIONS CORPORATION)
SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
Organization Name
SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Inventor(s)
HIDETOSHI Oishi of KANAGAWA JP
SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
This abstract first appeared for US patent application 18834732 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
Original Abstract Submitted
To achieve high integration and improvement in noise resistance. A semiconductor device includes first and second field-effect transistors. In addition, each of the first and second field-effect transistors includes a channel formation portion provided in a semiconductor including an upper surface and side surfaces, a gate electrode provided over the upper surface and the side surfaces in one direction of the semiconductor, and a gate insulating film provided between the semiconductor and the gate electrode. In addition, a width, in the one direction, of the upper surface of the semiconductor layer overlapping the gate electrode of the first transistor is smaller than a width, in the one direction, of the upper surface of the semiconductor layer overlapping the gate electrode of the second transistor, and a film thickness of the gate insulating film of the second transistor is smaller than a film thickness of the gate insulating film of the first transistor.