18829368. Cascode Semiconductor Devices (The Hong Kong University of Science and Technology)
Cascode Semiconductor Devices
Organization Name
The Hong Kong University of Science and Technology
Inventor(s)
Cascode Semiconductor Devices
This abstract first appeared for US patent application 18829368 titled 'Cascode Semiconductor Devices
Original Abstract Submitted
A cascode semiconductor device comprise a normally-on high-voltage (HV) silicon carbide (SiC) junction field-effect transistor (JFET), a normally-off low-voltage (LV) gallium nitride (GaN) high-electron-mobility transistor (HEMT) and a clamping circuit. The SiC JFET has a first gate terminal, a first drain terminal and a first source terminal. The GaN HEMT has a second gate terminal, a second drain terminal and a second source terminal. The second drain terminal is connected to the first source terminal. The second source terminal is connected to the first gate terminal. The clamping circuit is connected between the second drain terminal and the second gate terminal and has a clamping voltage. The clamping voltage is greater than a magnitude of a threshold voltage of the SiC JFET and smaller than a reverse gate voltage limit of the SiC JFET.
