18823322. METHOD FOR MANUFACTURING JOSEPHSON JUNCTION DEVICE AND METHOD FOR MANUFACTURING QUBIT (Fujitsu Limited)
METHOD FOR MANUFACTURING JOSEPHSON JUNCTION DEVICE AND METHOD FOR MANUFACTURING QUBIT
Organization Name
Inventor(s)
Tsuyoshi Takahashi of Ebina (JP)
METHOD FOR MANUFACTURING JOSEPHSON JUNCTION DEVICE AND METHOD FOR MANUFACTURING QUBIT
This abstract first appeared for US patent application 18823322 titled 'METHOD FOR MANUFACTURING JOSEPHSON JUNCTION DEVICE AND METHOD FOR MANUFACTURING QUBIT
Original Abstract Submitted
A method for manufacturing a Josephson junction device, includes: forming a mask layer on a substrate; forming, with the mask layer as a mask, a first superconducting film above the substrate by first film formation from a first oblique direction; forming an insulating film at a surface of the first superconducting film; and forming, with the mask layer as the mask, a second superconducting film having a region overlapping the first superconducting film via the insulating film by second film formation from a second oblique direction, wherein the mask layer includes: a first mask pattern in a first region of the substrate and a second mask pattern that is positioned in a second region of the substrate, and the second region is positioned closer to an end of the substrate than the first region.