18819770. MEMORY DEVICE (Kioxia Corporation)
MEMORY DEVICE
Organization Name
Inventor(s)
Tsuneo Inaba of Kamakura Kanagawa JP
Shinji Miyano of Yokohama Kanagawa JP
MEMORY DEVICE
This abstract first appeared for US patent application 18819770 titled 'MEMORY DEVICE
Original Abstract Submitted
A memory device includes a transistor, a capacitor, a plate line, and a bit line. The transistor includes an oxide semiconductor and includes a first end, a second end, and a gate. The capacitor includes a third end and a fourth end. The fourth end is coupled to the second end. The plate line is coupled to the third end. The bit line is coupled to the first end. A second voltage lower than a first voltage is applied to the plate line during a first period over which the first voltage is applied to the gate. A fourth voltage higher than the second voltage is applied to the plate line during at least a part of a second period over which a third voltage lower than the first voltage is applied to the gate.