18818299. SEMICONDUCTOR DEVICE (FUJI ELECTRIC CO., LTD.)
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kaname Mitsuzuka of Matsumoto-city JP
SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18818299 titled 'SEMICONDUCTOR DEVICE
Original Abstract Submitted
On a single semiconductor substrate, a main semiconductor device is provided in an active-region operating region and a current sensing portion for detecting overcurrent flowing through the main semiconductor device is provided in a sensing region. The main semiconductor device and the current sensing portion are vertical IGBTs with a trench gate structure. All cells of the main semiconductor device have a CS region. Some of the cells of the current sensing portion have the same structure as the structure of the cells of the main semiconductor device while some of the cells have a structure that is free of CS regions but otherwise the same as the structure of the cells of the main semiconductor device. An average carrier concentration of the CS regions per unit area of the sensing region is less than that of the CS regions per unit area of the active-region operating region.