18817646. METAL-CONTAINING HARDMASK OPENING METHODS USING BORON-AND-HALOGEN-CONTAINING PRECURSORS (Applied Materials, Inc.)
METAL-CONTAINING HARDMASK OPENING METHODS USING BORON-AND-HALOGEN-CONTAINING PRECURSORS
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METAL-CONTAINING HARDMASK OPENING METHODS USING BORON-AND-HALOGEN-CONTAINING PRECURSORS
This abstract first appeared for US patent application 18817646 titled 'METAL-CONTAINING HARDMASK OPENING METHODS USING BORON-AND-HALOGEN-CONTAINING PRECURSORS
Original Abstract Submitted
Exemplary semiconductor processing methods may include providing a boron-and-halogen-containing precursor and an oxygen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. A layer of metal-containing hardmask material may be disposed on the substrate. A layer of silicon-containing material may be disposed on the layer of metal-containing hardmask material. The methods may include forming plasma effluents of the boron-and-halogen-containing precursor and the oxygen-containing precursor. The methods may include contacting the substrate with the plasma effluents of the boron-and-halogen-containing precursor and the oxygen-containing precursor. The contacting may etch a feature in the layer of metal-containing hardmask material. The contacting may form a layer of passivation material on sidewalls of the feature in the layer of metal-containing hardmask material.
