18817372. MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE (Kioxia Corporation)
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Shunichi Yoneda of Yokkaichi Mie JP
Kazuhiro Matsuo of Kuwana Mie JP
Masaya Toda of Yokkaichi Mie JP
Kota Takahashi of Yokkaichi Mie JP
Masaya Nakata of Yokkaichi Mie JP
Kenichiro Toratani of Yokkaichi Mie JP
Takuma Doi of Yokkaichi Mie JP
Wakako Moriyama of Yokohama Kanagawa JP
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18817372 titled 'MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Original Abstract Submitted
A manufacturing method includes loading a substrate into a chamber, the substrate including oxide semiconductor; configuring a temperature in the chamber to a first temperature; supplying an oxidizing gas into the chamber; lowering the temperature in the chamber from the first temperature; stopping supplying the oxidizing gas into the chamber after lowering the temperature; and unloading the substrate from the chamber after the temperature in the chamber reaches a second temperature lower than the first temperature.
- Kioxia Corporation
- Shunichi Yoneda of Yokkaichi Mie JP
- Kazuhiro Matsuo of Kuwana Mie JP
- Masaya Toda of Yokkaichi Mie JP
- Kota Takahashi of Yokkaichi Mie JP
- Masaya Nakata of Yokkaichi Mie JP
- Kenichiro Toratani of Yokkaichi Mie JP
- Ha Hoang of Kuwana Mie JP
- Takuma Doi of Yokkaichi Mie JP
- Wakako Moriyama of Yokohama Kanagawa JP
- H01L21/46
- C23C8/12
- CPC H01L21/46