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18814679. SEMICONDUCTOR MEMORY DEVICE (Kioxia Corporation)

From WikiPatents

SEMICONDUCTOR MEMORY DEVICE

Organization Name

Kioxia Corporation

Inventor(s)

Akiyuki Murayama of Koto JP

Yusuke Arayashiki of Kawasaki JP

Tsuyoshi Ogikubo of Yokohama JP

Suzuka Kajiwara of Kamakura JP

Motohiko Fujimatsu of Shinagawa JP

Katsuya Nishiyama of Yokohama JP

Kikuko Sugimae of Yokohama JP

SEMICONDUCTOR MEMORY DEVICE

This abstract first appeared for US patent application 18814679 titled 'SEMICONDUCTOR MEMORY DEVICE

Original Abstract Submitted

A semiconductor memory device includes: a memory cell array including a plurality of bit lines, a source line, a plurality of NAND strings, a first and a second sub block, a first word line group included in the first sub block, a second word line group included in the second sub block, and a dummy word line located between the first and second sub blocks; and a control circuit capable of applying predetermined voltages to the first word line group, the second word line group, and the dummy word line. When a specific word line belonging to the first word line group is selected for the execution of a write operation, a voltage higher than voltages applied to an unselected word line belonging to the first word line group and the second word line group is applied to the dummy word line.

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