18811793. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME (SK hynix Inc.)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
Young Gwang Yoon of Gyeonggi-do KR
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
This abstract first appeared for US patent application 18811793 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Original Abstract Submitted
A semiconductor device includes a semiconductor substrate including a first active region and a second active region, a first dielectric layer disposed over the first active region, a second dielectric layer disposed over the second active region, a first gate electrode disposed over the first dielectric layer, and a second gate electrode disposed over the second dielectric layer. The first active region and the second active region have different conductivity types. The first dielectric layer and the second dielectric layer include a same dielectric material. The dipole concentration of the first dielectric layer is different from dipole concentration of the second dielectric layer.