18809745. SEMICONDUCTOR DEVICES AND METHOD OF FABRICATING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICES AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Seunghun Lee of Hwaseong-si (KR)
SEMICONDUCTOR DEVICES AND METHOD OF FABRICATING THE SAME
This abstract first appeared for US patent application 18809745 titled 'SEMICONDUCTOR DEVICES AND METHOD OF FABRICATING THE SAME
Original Abstract Submitted
A semiconductor device includes a substrate including a fin-type active region, the fin-type active region extending in a first direction; a plurality of channel layers on the fin-type active region, the plurality of channel layers including an uppermost channel layer, a lowermost channel layer, and an intermediate channel layer isolated from direct contact with each other in a direction perpendicular to an upper surface of the substrate; a gate electrode surrounding the plurality of channel layers and extending in a second direction intersecting the first direction; a gate insulating film between the plurality of channel layers and the gate electrode; and source/drain regions electrically connected to the plurality of channel layers. In a cross section taken in the second direction, the uppermost channel layer has a width greater than a width of the intermediate channel layer.