18808257. SEMICONDUCTOR DEVICE (Kioxia Corporation)
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Hisashi Kato of Yokkaichi Mie (JP)
Masayoshi Tagami of Kuwana Mie (JP)
Akira Nakajima of Zama Kanagawa (JP)
SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18808257 titled 'SEMICONDUCTOR DEVICE
Original Abstract Submitted
A semiconductor device includes a first chip including a first insulating layer; a second chip bonded to the first chip and including a second insulating layer; and a pad provided around a bonded surface between the first chip and the second chip. The pad includes a first metal layer including a first metal, a second metal layer disposed between the first metal layer and the first insulating layer, and a third metal layer disposed between the first metal layer and the second insulating layer. At least one of the second metal layer or the third metal layer include a second metal having oxidation energy lower than oxidation energy of the first metal. The first metal layer further includes the second metal.