18808098. SEMICONDUCTOR BONDED STRUCTURE AND FABRICATING METHOD THEREOF (Macronix International Co., Ltd.)
SEMICONDUCTOR BONDED STRUCTURE AND FABRICATING METHOD THEREOF
Organization Name
Macronix International Co., Ltd.
Inventor(s)
Cheng-Hsien Lu of Taoyuan City (TW)
Dai-Ying Lee of Hsinchu County (TW)
SEMICONDUCTOR BONDED STRUCTURE AND FABRICATING METHOD THEREOF
This abstract first appeared for US patent application 18808098 titled 'SEMICONDUCTOR BONDED STRUCTURE AND FABRICATING METHOD THEREOF
Original Abstract Submitted
A semiconductor bonded structure including a first semiconductor chip, at least one second semiconductor chip, a stress adjusting structure, and a circuit layer is provided. The at least one second semiconductor chip is disposed on the first semiconductor chip and electrically connected to the first semiconductor chip. The stress adjusting structure is disposed in at least one of the first semiconductor chip and the at least one second semiconductor chip. The circuit layer is disposed on the at least one second semiconductor chip and the circuit layer is electrically connected to the at least one second semiconductor chip. A fabricating method of the semiconductor bonded structure is also provided. The semiconductor bonded structure may be applied to the fabrication of 3D NAND flash memory with high performance and high capacity.