18805550. PIEZOELECTRIC LAMINATE AND PIEZOELECTRIC ELEMENT (FUJIFILM Corporation)
PIEZOELECTRIC LAMINATE AND PIEZOELECTRIC ELEMENT
Organization Name
Inventor(s)
Hiroyuki Kobayashi of Kanagawa JP
PIEZOELECTRIC LAMINATE AND PIEZOELECTRIC ELEMENT
This abstract first appeared for US patent application 18805550 titled 'PIEZOELECTRIC LAMINATE AND PIEZOELECTRIC ELEMENT
Original Abstract Submitted
A piezoelectric laminate comprise: a substrate; and a lower electrode layer, a seed layer, and a piezoelectric film, in which the piezoelectric film contains, as a main component, a first perovskite-type oxide containing Pb, Zr, Ti, and Nb, the seed layer contains, as a main component, a second perovskite-type oxide that is lattice-matched with the first perovskite-type oxide, and in a crystal grain size distribution acquired by an electron back scattered diffraction method, a proportion of crystal grains having a grain size of 100 nm or less is 15% or less in the piezoelectric film, and, the piezoelectric film satisfies the following expressions: |Ec+Ec |<|Ec−Ec|, 55 kV/cm≤Ec≤75 kV/cm, and 75 kV/cm≤Ec−Ec≤100 kV/cm, wherein Ec is a positive-side coercive electric field and Ec is a negative-side coercive electric field in polarization-electric field characteristics.
