18802058. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Hyunsang Hwang of Pohang-si KR
SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
This abstract first appeared for US patent application 18802058 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Original Abstract Submitted
A semiconductor device includes a substrate, source/drain regions on the substrate, a channel layer between the source/drain regions and including indium gallium zinc oxide (IGZO), a variable resistance layer on the channel layer and including metal oxide that satisfies a stoichiometric ratio of metal to oxygen, a gate insulating layer on the variable resistance layer and including metal oxide that does not satisfy the stoichiometric ratio of metal to oxygen, and a gate electrode on the gate insulating layer.