NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

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NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

This abstract first appeared for US patent application 18798916 titled 'NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Original Abstract Submitted

The present disclosure provides a nitride semiconductor device. The nitride semiconductor device includes: an electron travelling layer; an electron supply layer; a gate layer, formed on the electron supply layer; a gate electrode, formed on the gate layer; and a passivation layer, having a source opening and a drain opening. The electron travelling layer includes: a first portion, located under the gate layer; and a second portion, located between the gate layer and the source opening, and located between the gate layer and the drain opening. The electron supply layer includes: a first electron supply layer, formed on the first portion and located below the gate layer; and a second electron supply layer, formed on the second portion and connected to the first electron supply layer.