18798025. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE (TOYOTA JIDOSHA KABUSHIKI KAISHA)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Organization Name
TOYOTA JIDOSHA KABUSHIKI KAISHA
Inventor(s)
Shin Kinoshita of Nisshin-shi JP
Tomofumi Niibayashi of Nisshin-shi JP
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18798025 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Original Abstract Submitted
A semiconductor device includes a semiconductor substrate that includes a first semiconductor layer of p-type, a drift layer disposed below the first semiconductor layer, and a second semiconductor layer of n-type disposed below the drift layer. The drift layer includes a first semiconductor region of a first conductivity type, and a plurality of second semiconductor regions of a second conductivity type and a plurality of third semiconductor regions of the second conductivity type distributed in the first semiconductor region. Each of the second semiconductor regions has a shape elongated in a first direction. Each of the third semiconductor regions has a shape elongated in a second direction that is perpendicular to the first direction. The second semiconductor regions and the third semiconductor regions are alternately arranged at intervals along the first direction, and are alternately arranged at intervals along the second direction.