18796397. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD (KABUSHIKI KAISHA TOSHIBA)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
This abstract first appeared for US patent application 18796397 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
Original Abstract Submitted
A semiconductor device according to an embodiment includes a cell region and a termination region adjacent to the cell region. A first insulating film is provided on a first main surface of a semiconductor portion. A first semiconductor region of a first conductivity type provided in the semiconductor portion, a gate electrode, and a gate insulating film covering the gate electrode are provided in the cell region. A second semiconductor region of a second conductivity type provided between the first semiconductor region and the first main surface from the cell region to the termination region is in contact with at least a part of a bottom surface of the gate insulating film. A first member is provided between the second semiconductor region and the first insulating film.