18783955. SELF-ALIGNED GATE STRUCTURE (TEXAS INSTRUMENTS INCORPORATED)
SELF-ALIGNED GATE STRUCTURE
Organization Name
TEXAS INSTRUMENTS INCORPORATED
Inventor(s)
Zhikai Tang of Sunnyvale CA US
Masahiko Higashi of Aizuwakamatsu JP
Ujwal Radhakrishna of San Jose CA US
SELF-ALIGNED GATE STRUCTURE
This abstract first appeared for US patent application 18783955 titled 'SELF-ALIGNED GATE STRUCTURE
Original Abstract Submitted
The present disclosure generally relates to semiconductor processing for a self-aligned gate structure and corresponding semiconductor device. In an example, a semiconductor device includes a semiconductor substrate, a semiconductor gate layer, an offset dielectric layer, and a gate metal contact. The semiconductor gate layer is over the semiconductor substrate. The offset dielectric layer is over the semiconductor gate layer. The gate metal contact is over the offset dielectric layer and is through an opening through the offset dielectric layer. The gate metal contact contacts the semiconductor gate layer through the opening through the offset dielectric layer. A first sidewall of the semiconductor gate layer, a second sidewall of the offset dielectric layer, and a third sidewall of the gate metal contact are vertically aligned over the semiconductor substrate.
