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18768922. DECODER ARCHITECTURE FOR MEMORY DEVICE (Micron Technology, Inc.)

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DECODER ARCHITECTURE FOR MEMORY DEVICE

Organization Name

Micron Technology, Inc.

Inventor(s)

Ferdinando Bedeschi of Biassono (IT)

Jeffrey E. Koelling of Fairview TX (US)

Hari Giduturi of Folsom CA (US)

Riccardo Muzzetto of Arcore (IT)

Corrado Villa of Sovico (IT)

DECODER ARCHITECTURE FOR MEMORY DEVICE

This abstract first appeared for US patent application 18768922 titled 'DECODER ARCHITECTURE FOR MEMORY DEVICE



Original Abstract Submitted

Methods, systems, and devices for decoder architecture for memory device are described. An apparatus includes a memory array having a memory cell and an access line coupled with the cell and a decoder having a first stage and a second stage. The decoder supplying a first voltage during a first access operation and a second voltage during a second access operation to the access line. The second stage of the decoder includes a first transistor that supplies the first voltage based on a third voltage at the source of the first transistor exceeding a fourth voltage at a gate of the first transistor and a first threshold voltage. The second stage includes a second transistor that supplies the second voltage based on a fifth voltage at a gate of the second transistor exceeding a sixth voltage at the source of the second transistor and a second threshold voltage.

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