18762812. INTEGRATED CIRCUIT DEVICE (SAMSUNG ELECTRONICS CO., LTD.)
INTEGRATED CIRCUIT DEVICE
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INTEGRATED CIRCUIT DEVICE
This abstract first appeared for US patent application 18762812 titled 'INTEGRATED CIRCUIT DEVICE
Original Abstract Submitted
An integrated circuit device includes a substrate having formed therein a word line trench extending long in a first horizontal direction, a gate dielectric film covering an inner surface of the word line trench, a word line on the gate dielectric film, the word line filling a lower space of the word line trench and extending long in the first horizontal direction, an insulating capping pattern on the word line, the insulating capping pattern filling an upper space of the word line trench and extending long in the first horizontal direction, and at least one ferroelectric layer arranged at a top portion of the word line and including a first sidewall in contact with the gate dielectric film.