18761886. SEMICONDUCTOR DEVICE AND INTERCONNECTION STRUCTURE IN SEMICONDUCTOR DEVICE (Samsung Electronics Co., Ltd.)
SEMICONDUCTOR DEVICE AND INTERCONNECTION STRUCTURE IN SEMICONDUCTOR DEVICE
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SEMICONDUCTOR DEVICE AND INTERCONNECTION STRUCTURE IN SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18761886 titled 'SEMICONDUCTOR DEVICE AND INTERCONNECTION STRUCTURE IN SEMICONDUCTOR DEVICE
Original Abstract Submitted
An interconnection structure may include a first insulating interlayer on a substrate, a first metal pattern on the substrate and passing through the first insulating interlayer, a seed metal layer pattern surrounding a portion of a sidewall of the first metal pattern and a bottom of the first metal pattern, and a second metal pattern. The second metal pattern may directly contact an uppermost surface of the seed metal layer pattern, the upper sidewall of the first metal pattern, and the upper surface of the first metal pattern. An upper sidewall and an upper surface of the first metal pattern may be exposed by the seed metal layer pattern. The second metal pattern may fill at least a recess between the first insulating interlayer and the first metal pattern.