18758118. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES (Samsung Electronics Co., Ltd.)
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Kyoungchul Shin of Suwon-si KR
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES
This abstract first appeared for US patent application 18758118 titled 'METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES
Original Abstract Submitted
A method for manufacturing a semiconductor device. The method may include forming an insulating interlayer on a substrate, forming tungsten patterns inside and on the insulating interlayer, forming an insulation pattern on the insulating interlayer to fill a space between the tungsten patterns, and the insulation pattern having a lowest point of an upper surface lower than an upper surface of each of the tungsten patterns, forming a preliminary tungsten oxide layer on the upper surface of each of the tungsten patterns, performing a first surface plasma treatment on the preliminary tungsten oxide layer to remove at least a portion of the preliminary tungsten oxide layer to form a tungsten oxide layer and a protective layer on the tungsten oxide layer, and forming an etch stop layer on the protective layer and the insulation pattern.