VERTICALLY-ORIENTED COMPLEMENTARY TRANSISTOR

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

VERTICALLY-ORIENTED COMPLEMENTARY TRANSISTOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 18757165 titled 'VERTICALLY-ORIENTED COMPLEMENTARY TRANSISTOR

The semiconductor device described in the abstract includes a first transistor and a second transistor stacked vertically over the first transistor. The first transistor consists of multiple channel members stacked over each other, with a first source/drain feature adjacent to them. The second transistor includes a fin structure and a second source/drain feature adjacent to the fin structure. Additionally, the device features a conductive feature that connects the first and second source/drain features.

The semiconductor device comprises a unique design with vertically stacked channel members in the first transistor.
The second transistor utilizes a fin structure for improved performance.
A conductive feature connects the source/drain features of the two transistors, enhancing overall functionality.
This innovation potentially leads to increased efficiency and performance in semiconductor devices.
The design allows for more compact and powerful devices in various electronic applications.

Potential Applications

The technology could be applied in the development of advanced electronic devices such as smartphones, tablets, and computers. It may also find use in the automotive industry for improving the performance of vehicle electronics. The innovation could be beneficial in the creation of high-speed communication devices and data processing systems.

Problems Solved

The technology addresses the need for more efficient and compact semiconductor devices. It solves the challenge of enhancing performance in electronic devices while maintaining a small form factor. The innovation tackles the demand for improved connectivity and functionality in modern electronics.

Benefits

Improved performance and efficiency in semiconductor devices. Enhanced connectivity and functionality in electronic applications. Potential for smaller and more powerful electronic devices. Increased speed and data processing capabilities.

Commercial Applications

Title: Advanced Semiconductor Technology for Enhanced Electronic Devices The technology could be commercially utilized in the production of consumer electronics, leading to more powerful and compact devices. It may have implications in the development of high-performance computing systems for various industries. The innovation could open up opportunities for semiconductor manufacturers to create cutting-edge products for the market.

Questions about Semiconductor Device

What are the key features of the semiconductor device described in the abstract?

The semiconductor device features vertically stacked channel members, a fin structure, and a conductive feature connecting the source/drain features of the transistors.

How does the innovation in this semiconductor device contribute to the advancement of electronic devices?

The innovation enhances performance, efficiency, and connectivity in electronic devices, leading to improved functionality and potential for smaller form factors.

Original Abstract Submitted

A semiconductor device according to the present disclosure includes a first transistor and a second transistor disposed over the first transistor. The first transistor includes a plurality of channel members vertically stacked over one another, and a first source/drain feature adjoining the plurality of channel members. The second transistor includes a fin structure, and a second source/drain feature adjoining the fin structure. The semiconductor device further includes a conductive feature electrically connecting the first source/drain feature and the second source/drain feature.