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18755008. STACKED INTEGRATED CIRCUIT DEVICE (SAMSUNG ELECTRONICS CO., LTD.)

From WikiPatents

STACKED INTEGRATED CIRCUIT DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Kyunghee Cho of Suwon-si KR

Byungho Moon of Suwon-si KR

Donghoon Hwang of Suwon-si KR

STACKED INTEGRATED CIRCUIT DEVICE

This abstract first appeared for US patent application 18755008 titled 'STACKED INTEGRATED CIRCUIT DEVICE

Original Abstract Submitted

Provided is an integrated circuit device including a base substrate layer, a sheet separation wall extending on the base substrate layer in a first horizontal direction, a pair of nanosheet stacked structures including the sheet separation wall therebetween and apart from each other in a second horizontal direction, the second horizontal direction different from the first horizontal direction, the pair of nanosheet stacked structures each including a plurality of nanosheets, a plurality of cladding patterns between a first end of each of the plurality of nanosheets included in each of the pair of nanosheet stacked structures and the sheet separation wall, and a pair of gate electrodes extending on the pair of nanosheet stacked structures in the second horizontal direction.

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