METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLANTATION PROCESSES

Organization Name

Inventor(s)

[[:Category:Axel K�nig of Villach (AT)|Axel K�nig of Villach (AT)]][[Category:Axel K�nig of Villach (AT)]]

Kristijan Luka Mletschnig of Klagenfurt (AT)

[[:Category:Andreas V�rckel of Finkenstein (AT)|Andreas V�rckel of Finkenstein (AT)]][[Category:Andreas V�rckel of Finkenstein (AT)]]

Caspar Leendertz of München (DE)

Werner Schustereder of Villach (AT)

Hans-Joachim Schulze of Taufkirchen (DE)

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLANTATION PROCESSES

This abstract first appeared for US patent application 18754277 titled 'METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLANTATION PROCESSES

Original Abstract Submitted

A method of manufacturing a semiconductor device includes forming a doped region in a semiconductor body. Forming the doped region includes: introducing first dopants through a first surface of the semiconductor body at a first vertical reference level by a first ion implantation process; thereafter, applying a first heat treatment to the semiconductor body; and thereafter, introducing second dopants through the first surface of the semiconductor body at the first vertical reference level by a second ion implantation process. An atomic number of the first dopants is equal to an atomic number of the second dopants. An ion implantation energy of the second ion implantation process differs by less than 20% from an ion implantation energy of the first ion implantation process. An ion implantation dose of the second ion implantation process differs by less than 20% from an ion implantation dose of the first ion implantation process.