18749013. LAYOUT STRUCTURE INCLUDING ANTI-FUSE CELL simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
LAYOUT STRUCTURE INCLUDING ANTI-FUSE CELL
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Meng-Sheng Chang of Hsinchu County (TW)
Chia-En Huang of Hsinchu County (TW)
Wan-Hsueh Cheng of New Taipei City (TW)
Yao-Jen Yang of Hsinchu County (TW)
LAYOUT STRUCTURE INCLUDING ANTI-FUSE CELL - A simplified explanation of the abstract
This abstract first appeared for US patent application 18749013 titled 'LAYOUT STRUCTURE INCLUDING ANTI-FUSE CELL
The structure described in the patent application includes first and second active areas, first and second gates, and a data line. The first gate is continuous and crosses over both active areas, corresponding to gate terminals of first and second transistors. The first source/drain regions of the active areas correspond to the first source/drain terminals of the transistors. The second gate consists of two electrically isolated portions, corresponding to gate terminals of third and fourth transistors. The first gate portion crosses over the first active area, while the second gate portion crosses over the second active area. The first data line is connected to the first source/drain regions of both active areas.
- The structure includes first and second active areas, gates, and a data line.
- The first gate crosses over both active areas and corresponds to gate terminals of transistors.
- The second gate has two isolated portions corresponding to gate terminals of other transistors.
- The first data line is connected to the source/drain regions of the active areas.
Potential Applications: - Semiconductor devices - Integrated circuits - Electronics manufacturing
Problems Solved: - Improved performance of transistors - Enhanced connectivity in electronic devices
Benefits: - Increased efficiency - Better functionality in electronic devices
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Electronics Manufacturing This technology can be used in the production of high-performance electronic devices, leading to improved consumer electronics and industrial equipment.
Prior Art: Researchers can explore prior patents related to semiconductor devices, integrated circuits, and transistor technology to understand the evolution of this innovation.
Frequently Updated Research: Researchers are constantly developing new techniques for enhancing semiconductor devices and improving the performance of electronic components.
Questions about the technology: 1. How does this innovation impact the efficiency of electronic devices? 2. What are the potential advancements in semiconductor technology that could stem from this innovation?
Original Abstract Submitted
A structure includes first and second active areas, first and second gates and a data line. The first gate is continuous and crosses over the first active area and the second active area. The first gate corresponds to gate terminals of first and second transistors, and first source/drain regions of the first and the second active areas correspond to first source/drain terminals of the first and second transistors. The second gate includes first and second gate portions electrically isolated from each other. The first and second gate portions correspond to gate terminals of third and fourth transistors, respectively. The first gate portion crosses over the first active area, and the second gate portion crosses over the second active area. The first data line is coupled to the first source/drain regions of the first active area and the second active area.
