MEMORY STRUCTURE WITH FERROMAGNETIC ELECTRODE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Wei-Jen Chen of Tainan City (TW)

Ya-Jui Tsou of Taichung City (TW)

Chee-Wee Liu of Taipei City (TW)

Shao-Yu Lin of Taichung City (TW)

Chih-Lin Wang of Hsinchu County (TW)

MEMORY STRUCTURE WITH FERROMAGNETIC ELECTRODE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18748476 titled 'MEMORY STRUCTURE WITH FERROMAGNETIC ELECTRODE

The memory structure described in the patent application consists of a dielectric layer, two ferromagnetic bottom electrodes, an SOT channel layer, and an MTJ structure. The first ferromagnetic bottom electrode extends through the dielectric layer, while the second ferromagnetic bottom electrode is spaced apart from the first one. The SOT channel layer extends between the two ferromagnetic bottom electrodes, and the MTJ structure is positioned over the SOT channel layer.

Dielectric layer
First and second ferromagnetic bottom electrodes
SOT channel layer
MTJ structure

Potential Applications: - Non-volatile memory devices - Magnetic sensors - Spintronic devices

Problems Solved: - Enhancing memory storage capabilities - Improving data retention in memory devices - Increasing efficiency in magnetic sensors

Benefits: - Higher memory density - Improved data security - Faster data access speeds

Commercial Applications: Title: Advanced Non-Volatile Memory Technology for Enhanced Data Storage This technology can be utilized in various industries such as data storage, consumer electronics, and automotive for applications requiring high-speed, high-density memory solutions.

Questions about the technology: 1. How does this memory structure improve data retention compared to traditional memory devices? 2. What are the potential challenges in implementing this technology in commercial products?

Original Abstract Submitted

A memory structure comprises a dielectric layer, a first ferromagnetic bottom electrode, a second ferromagnetic bottom electrode, an SOT channel layer, and an MTJ structure. The dielectric layer is over the substrate. The first ferromagnetic bottom electrode extends through the dielectric layer. The second ferromagnetic bottom electrode extends through the dielectric layer, and is spaced apart from the first ferromagnetic bottom electrode. The SOT channel layer extends from the first ferromagnetic bottom electrode to the second ferromagnetic bottom electrode. The MTJ structure is over the SOT channel layer.