18747687. GAS INJECTOR FOR EPITAXY AND CVD CHAMBER simplified abstract (Applied Materials, Inc.)
GAS INJECTOR FOR EPITAXY AND CVD CHAMBER
Organization Name
Inventor(s)
Tetsuya Ishikawa of San Jose CA (US)
Swaminathan T. Srinivasan of Pleasanton CA (US)
Matthias Bauer of Sunnyvale CA (US)
Ala Moradian of Sunnyvale CA (US)
Manjunath Subbanna of Bangalore (IN)
Kartik Bhupendra Shah of Saratoga CA (US)
Errol Antonio C. Sanchez of Tracy CA (US)
Sohrab Zokaei of Los Altos CA (US)
Michael R. Rice of Pleasanton CA (US)
Peter Reimer of Los Altos CA (US)
GAS INJECTOR FOR EPITAXY AND CVD CHAMBER - A simplified explanation of the abstract
This abstract first appeared for US patent application 18747687 titled 'GAS INJECTOR FOR EPITAXY AND CVD CHAMBER
The present disclosure pertains to gas inject apparatus for a process chamber used in semiconductor substrate processing. The apparatus includes gas injectors that are connected to the process chamber and distribute process gas through gas outlets. The gas injectors feature multiple pathways, a fin array, and a baffle array, and are individually heated. A gas mixture assembly is employed to regulate the concentration and flow rate of process gases from each injector into the process volume.
- Gas inject apparatus for semiconductor substrate processing
- Gas injectors distribute process gas through outlets
- Injectors have multiple pathways, fin array, and baffle array
- Individual heating of gas injectors
- Gas mixture assembly controls concentration and flow rate of process gases
Potential Applications: - Semiconductor manufacturing - Thin film deposition processes - Solar cell production
Problems Solved: - Precise control of process gas concentration and flow rate - Uniform distribution of process gas in the chamber
Benefits: - Enhanced process control and efficiency - Improved product quality and consistency - Reduced waste and cost savings
Commercial Applications: Title: Gas Inject Apparatus for Semiconductor Processing: Commercial Uses and Market Implications This technology can be utilized in semiconductor fabrication facilities, research institutions, and solar panel manufacturing plants to optimize process parameters and enhance production efficiency.
Questions about Gas Inject Apparatus for Semiconductor Processing: 1. How does the gas mixture assembly regulate the concentration of process gases? The gas mixture assembly controls the concentration of process gases by adjusting the flow rates from each gas injector, ensuring precise mixing and distribution within the process chamber.
2. What are the advantages of individually heating the gas injectors? Individually heating the gas injectors allows for better temperature control, preventing condensation or clogging of the gas pathways and ensuring consistent gas flow and distribution.
Original Abstract Submitted
The present disclosure generally relates to gas inject apparatus for a process chamber for processing of semiconductor substrates. The gas inject apparatus include one or more gas injectors which are configured to be coupled to the process chamber. Each of the gas injectors are configured to receive a process gas and distribute the process gas across one or more gas outlets. The gas injectors include a plurality of pathways, a fin array, and a baffle array. The gas injectors are individually heated. A gas mixture assembly is also utilized to control the concentration of process gases flown into a process volume from each of the gas injectors. The gas mixture assembly enables the concentration as well as the flow rate of the process gases to be controlled.
- Applied Materials, Inc.
- Tetsuya Ishikawa of San Jose CA (US)
- Swaminathan T. Srinivasan of Pleasanton CA (US)
- Matthias Bauer of Sunnyvale CA (US)
- Ala Moradian of Sunnyvale CA (US)
- Manjunath Subbanna of Bangalore (IN)
- Kartik Bhupendra Shah of Saratoga CA (US)
- Errol Antonio C. Sanchez of Tracy CA (US)
- Sohrab Zokaei of Los Altos CA (US)
- Michael R. Rice of Pleasanton CA (US)
- Peter Reimer of Los Altos CA (US)
- C23C16/455
- B01J4/00
- C23C16/44
- CPC C23C16/4558
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