18746856. EPI CHAMBER WITH FULL WAFER LASER HEATING simplified abstract (Applied Materials, Inc.)
EPI CHAMBER WITH FULL WAFER LASER HEATING
Organization Name
Inventor(s)
Shu-Kwan Danny Lau of Sunnyvale CA (US)
Adel George Tannous of Santa Clara CA (US)
Patrick C. Genis of Boulder Creek CA (US)
Zhiyuan Ye of San Jose CA (US)
EPI CHAMBER WITH FULL WAFER LASER HEATING - A simplified explanation of the abstract
This abstract first appeared for US patent application 18746856 titled 'EPI CHAMBER WITH FULL WAFER LASER HEATING
Simplified Explanation: The patent application describes an apparatus for heating a substrate in a thermal processing chamber using a laser heating device.
Key Features and Innovation:
- Chamber body with gas inlet and outlet
- Upper and lower windows for observation
- Substrate support for holding the substrate
- Laser heating device with one or more laser assemblies
Potential Applications: The technology can be used in semiconductor manufacturing, solar cell production, and other industries requiring precise substrate heating.
Problems Solved: The apparatus addresses the need for accurate and controlled heating of substrates in a thermal processing environment.
Benefits:
- Precise and uniform heating of substrates
- Enhanced control over the heating process
- Improved efficiency and quality of thermal processing
Commercial Applications: Potential commercial applications include semiconductor fabrication, thin film deposition, and research laboratories.
Prior Art: Readers can explore prior art related to laser heating devices, thermal processing chambers, and substrate heating technologies.
Frequently Updated Research: Stay informed about the latest advancements in laser heating technology, thermal processing techniques, and substrate heating methods.
Questions about Laser Heating Technology: 1. How does laser heating compare to traditional heating methods in thermal processing? 2. What are the key advantages of using a laser heating device for substrate heating?
Original Abstract Submitted
An apparatus for heating a substrate within a thermal processing chamber is disclosed. The apparatus includes a chamber body, a gas inlet, a gas outlet, an upper window, a lower window, a substrate support, and an upper heating device. The upper heating device is a laser heating device and includes one or more laser assemblies. The laser assemblies include light sources, a cooling plate, optical fibers, and irradiation windows.