18746818. INPUT/OUTPUT SEMICONDUCTOR DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
INPUT/OUTPUT SEMICONDUCTOR DEVICES
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Mao-Lin Huang of Hsinchu City (TW)
Lung-Kun Chu of New Taipei City (TW)
Kuo-Cheng Chiang of Hsinchu County (TW)
INPUT/OUTPUT SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18746818 titled 'INPUT/OUTPUT SEMICONDUCTOR DEVICES
Simplified Explanation: The semiconductor device described in the patent application includes two gate-all-around (GAA) transistors, each with multiple channel members, interfacial layers, hafnium-containing dielectric layers, and metal gate electrode layers. The first transistor has thicker interfacial and thinner dielectric layers compared to the second transistor.
- The semiconductor device features two gate-all-around (GAA) transistors with unique layer configurations.
- The first transistor has a thicker interfacial layer and a thinner hafnium-containing dielectric layer compared to the second transistor.
- Both transistors utilize metal gate electrode layers for operation.
Potential Applications: This technology can be applied in advanced semiconductor devices, such as high-performance processors, memory chips, and other integrated circuits requiring efficient transistor designs.
Problems Solved: This innovation addresses the need for improved transistor performance and efficiency in semiconductor devices by optimizing the layer thicknesses in GAA transistors.
Benefits: The optimized layer configurations in the GAA transistors can lead to enhanced device performance, lower power consumption, and increased reliability in semiconductor applications.
Commercial Applications: Optimizing transistor design in semiconductor devices can lead to more efficient and powerful electronic products, benefiting industries such as consumer electronics, telecommunications, and computing.
Prior Art: To explore prior art related to this technology, researchers can investigate patents and research papers on GAA transistors, hafnium-containing dielectric layers, and metal gate electrode layers in semiconductor devices.
Frequently Updated Research: Researchers may find updated studies on advanced transistor designs, materials science in semiconductor technology, and innovations in integrated circuit manufacturing processes relevant to this technology.
Questions about Semiconductor Device Technology: 1. What are the key advantages of using gate-all-around (GAA) transistors in semiconductor devices? 2. How does the thickness of the interfacial and dielectric layers impact the performance of GAA transistors in semiconductor devices?
Original Abstract Submitted
A semiconductor device according to an embodiment includes a first gate-all-around (GAA) transistor and a second GAA transistor. The first GAA transistor includes a first plurality of channel members, a first interfacial layer over the first plurality of channel members, a first hafnium-containing dielectric layer over the first interfacial layer, and a metal gate electrode layer over the first hafnium-containing dielectric layer. The second GAA transistor includes a second plurality of channel members, a second interfacial layer over the second plurality of channel members, a second hafnium-containing dielectric layer over the second interfacial layer, and the metal gate electrode layer over the second hafnium-containing dielectric layer. A first thickness of the first interfacial layer is greater than a second thickness of the second interfacial layer. A third thickness of the first hafnium-containing dielectric layer is smaller than a fourth thickness of the second hafnium-containing dielectric layer.