SEMICONDUCTOR SENSOR AND METHODS THEREOF

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Yin-Kai Liao of Taipei City (TW)

Jen-Cheng Liu of Hsin-Chu City (TW)

Kuan-Chieh Huang of Hsinchu City (TW)

Chih-Ming Hung of Changhua County (TW)

Yi-Shin Chu of Hsinchu City (TW)

Hsiang-Lin Chen of Hsinchu (TW)

Sin-Yi Jiang of Hsinchu City (TW)

SEMICONDUCTOR SENSOR AND METHODS THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18745245 titled 'SEMICONDUCTOR SENSOR AND METHODS THEREOF

The abstract describes a method and structure for an optical sensor with an optimized Ge-Si interface, involving forming a trench, a doped semiconductor layer, a germanium layer, and an optical sensor within the germanium layer.

Formation of a trench within the pixel region of the substrate.
Creation of a doped semiconductor layer along the trench's sidewalls and bottom surface.
Deposition of a germanium layer within the trench and over the doped semiconductor layer.
Integration of an optical sensor within the germanium layer.

Potential Applications: - Optical sensors in various devices such as cameras, smartphones, and medical equipment. - Semiconductor manufacturing for improved sensor performance.

Problems Solved: - Enhanced sensitivity and efficiency of optical sensors. - Optimization of the Ge-Si interface for better performance.

Benefits: - Improved image quality in cameras and smartphones. - Higher accuracy in medical equipment. - Increased efficiency in semiconductor manufacturing processes.

Commercial Applications: Title: "Optical Sensor with Optimized Ge-Si Interface for Enhanced Performance" This technology can be used in the development of advanced optical sensors for consumer electronics, medical devices, and industrial applications. It has the potential to improve image quality, increase sensor sensitivity, and enhance overall device performance.

Prior Art: Research on semiconductor materials and optical sensor technologies can provide insights into prior art related to this innovation.

Frequently Updated Research: Ongoing studies on semiconductor materials, optical sensor design, and interface optimization may provide new developments and advancements in this field.

Questions about Optical Sensor with Optimized Ge-Si Interface: 1. How does the optimized Ge-Si interface improve the performance of optical sensors? 2. What are the potential challenges in implementing this technology in commercial devices?

Original Abstract Submitted

A method and structure providing an optical sensor having an optimized Ge—Si interface includes providing a substrate having a pixel region and a logic region. In some embodiments, the method further includes forming a trench within the pixel region. In various examples, and after forming the trench, the method further includes forming a doped semiconductor layer along sidewalls and along a bottom surface of the trench. In some embodiments, the method further includes forming a germanium layer within the trench and over the doped semiconductor layer. In some examples, and after forming the germanium layer, the method further includes forming an optical sensor within the germanium layer.