METHOD OF MANUFACTURING PHOTO MASKS

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Chien-Cheng Chen of Hsinchu County (TW)

Chia-Jen Chen of Jhudong Township (TW)

Hsin-Chang Lee of Zhubei City (TW)

Shih-Ming Chang of Hsinchu (TW)

Tran-Hui Shen of Dounan Township (TW)

Yen-Cheng Ho of Taichung City (TW)

Chen-Shao Hsu of Changhua County (TW)

METHOD OF MANUFACTURING PHOTO MASKS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18745211 titled 'METHOD OF MANUFACTURING PHOTO MASKS

Simplified Explanation: The patent application describes a method for manufacturing a photo mask for lithography, where circuit pattern data is used to calculate pattern density and generate dummy patterns for areas with low density. These dummy patterns are not printed on the photo mask, resulting in more efficient lithography processes.

Key Features and Innovation:

   - Calculation of pattern density from circuit pattern data
   - Generation of dummy patterns for low-density areas
   - Exclusion of dummy patterns from the final photo mask
   - Use of electron beam lithography for drawing patterns

Potential Applications:

   - Semiconductor manufacturing
   - Integrated circuit fabrication
   - Nanotechnology research

Problems Solved:

   - Improving lithography efficiency
   - Reducing errors in photo mask production
   - Enhancing pattern accuracy

Benefits:

   - Cost-effective lithography processes
   - Higher quality photo masks
   - Increased productivity in semiconductor industry

Commercial Applications:

   - "Efficient Lithography Process for Semiconductor Manufacturing"

Prior Art:

   - Prior research on electron beam lithography and photo mask production methods

Frequently Updated Research:

   - Ongoing advancements in lithography technology and materials

Questions about Lithography: 1. How does pattern density affect the efficiency of lithography processes? 2. What are the key differences between electron beam lithography and traditional lithography methods?

Original Abstract Submitted

In a method of manufacturing a photo mask for lithography, circuit pattern data are acquired. A pattern density, which is a total pattern area per predetermined area, is calculated from the circuit pattern data. Dummy pattern data for areas having pattern density less than a threshold density are generated. Mask drawing data is generated from the circuit pattern data and the dummy pattern data. By using an electron beam from an electron beam lithography apparatus, patterns are drawn according to the mask drawing data on a resist layer formed on a mask blank substrate. The drawn resist layer is developed using a developing solution. Dummy patterns included in the dummy pattern data are not printed as a photo mask pattern when the resist layer is exposed with the electron beam and is developed.