NON-SCATTERING NANOSTRUCTURES OF SILICON PIXEL IMAGE SENSORS

Organization Name

Inventor(s)

Radwanul Hasan Siddique of Monrovia CA (US)

Yibing Michelle Wang of Temple City CA (US)

NON-SCATTERING NANOSTRUCTURES OF SILICON PIXEL IMAGE SENSORS

This abstract first appeared for US patent application 18739319 titled 'NON-SCATTERING NANOSTRUCTURES OF SILICON PIXEL IMAGE SENSORS

Original Abstract Submitted

Provided are systems, methods, and apparatuses for non-scattering nanostructures of silicon pixel image sensors. In one or more examples, the systems, devices, and methods include forming a metal layer on a substrate layer of the pixel, the metal layer to reflect electromagnetic radiation incident on the pixel; forming a photodetector on a silicon layer of the pixel, the photodetector to generate photoelectrons based on the electromagnetic radiation; and forming a passivation layer over the silicon layer, the passivation layer including a thin film dielectric. In one or more examples, the systems, devices, and methods include forming a nanostructure on the passivation layer, the nanostructure to allow the electromagnetic radiation to pass through the nanostructure and steer the electromagnetic radiation linearly towards the photodetector, and forming a microlens on the nanostructure, the microlens including at least one of a flat coat layer or a curved lensing layer.