18738197. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
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SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
This abstract first appeared for US patent application 18738197 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
Original Abstract Submitted
A semiconductor device includes a substrate including an active pattern, a channel pattern on the active pattern, and including a plurality of semiconductor patterns spaced apart from each other and vertically stacked, a gate electrode on the plurality of semiconductor patterns, and extending in a first horizontal direction, a gate spacer disposed on a sidewall of the gate electrode in a second horizontal direction crossing the first horizontal direction, a source/drain pattern electrically connected to the plurality of semiconductor patterns, and including a first epitaxial pattern and a second epitaxial pattern on a side surface of the first epitaxial pattern in the second horizontal direction, and a protection pattern between at least one of the plurality of semiconductor patterns and the gate spacer and including a material having an etch selectivity with the first epitaxial pattern.