18738117. SEMICONDUCTOR WAFER TEMPERATURE MEASUREMENT METHOD (Kioxia Corporation)
SEMICONDUCTOR WAFER TEMPERATURE MEASUREMENT METHOD
Organization Name
Inventor(s)
Yoshifumi Nishio of Kuwana (JP)
SEMICONDUCTOR WAFER TEMPERATURE MEASUREMENT METHOD
This abstract first appeared for US patent application 18738117 titled 'SEMICONDUCTOR WAFER TEMPERATURE MEASUREMENT METHOD
Original Abstract Submitted
A semiconductor wafer temperature measurement method according to the present embodiment includes introducing an impurity into a first surface of a wafer to form an amorphous layer on a side of the first surface of the wafer. The present temperature measurement method includes measuring a first film thickness that is the film thickness of the amorphous layer. The present temperature measurement method includes thermally treating the wafer to recrystallize part of the amorphous layer. The present temperature measurement method includes measuring a second film thickness that is the film thickness of the amorphous layer after the thermal treatment. The present temperature measurement method includes measuring the temperature of the wafer at the thermal treatment based on a film thickness difference between the first film thickness and the second film thickness.