18736206. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME (ROHM CO., LTD.)
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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
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Inventor(s)
Kunihiko Iwamoto of Kyoto (JP)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
This abstract first appeared for US patent application 18736206 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
Original Abstract Submitted
A semiconductor device includes: a semiconductor substrate; a semiconductor layer that is located over the semiconductor substrate and includes a drain region, a source region, a drift region, and a channel region; an insulating film that is in contact with the semiconductor layer and is located over the channel region; a first interlayer insulating film that covers the insulating film; and a field plate that is located over the first interlayer insulating film, overlaps the drift region, and is electrically connected to the drain region.